Part Details for SPB03N60C3 by Infineon Technologies AG
Overview of SPB03N60C3 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Motor control systems
Price & Stock for SPB03N60C3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 514 |
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RFQ | ||
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Quest Components | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1600 |
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$0.5369 / $1.5340 | Buy Now |
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Quest Components | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 411 |
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$0.6136 / $1.5340 | Buy Now |
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Quest Components | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 720 |
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$0.6136 / $1.5340 | Buy Now |
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Sense Electronic Company Limited | TO-263 | 970 |
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RFQ |
Part Details for SPB03N60C3
SPB03N60C3 CAD Models
SPB03N60C3 Part Data Attributes:
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SPB03N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB03N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Pulsed Drain Current-Max (IDM) | 9.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |