Part Details for SPB100N04S2-04 by Infineon Technologies AG
Overview of SPB100N04S2-04 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SPB100N04S2-04
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPB100N04 - OptlMOS, 100A, 40V, 0.0033ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 433 |
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$1.3600 / $1.6000 | Buy Now |
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Chip1Cloud | MOSFET N-CH 40V 100A D2PAK | 6000 |
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RFQ |
Part Details for SPB100N04S2-04
SPB100N04S2-04 CAD Models
SPB100N04S2-04 Part Data Attributes
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SPB100N04S2-04
Infineon Technologies AG
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Datasheet
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SPB100N04S2-04
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB100N04S2-04
This table gives cross-reference parts and alternative options found for SPB100N04S2-04. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB100N04S2-04, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB100N04S3-03 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB100N04S2-04 vs IPB100N04S3-03 |
| BUK953R2-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | SPB100N04S2-04 vs BUK953R2-40E,127 |
| IPD90N04S403ATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | SPB100N04S2-04 vs IPD90N04S403ATMA1 |
| 934066421127 | 100A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | SPB100N04S2-04 vs 934066421127 |
| IPC100N04S52R8ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | SPB100N04S2-04 vs IPC100N04S52R8ATMA1 |
| IPD90N04S4-03 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPB100N04S2-04 vs IPD90N04S4-03 |
| IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB100N04S2-04 vs IPB100N04S204ATMA1 |
| AUIRFR8403TRLARMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | Infineon Technologies AG | SPB100N04S2-04 vs AUIRFR8403TRLARMA1 |
| IPD90N04S3-04 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SPB100N04S2-04 vs IPD90N04S3-04 |