Part Details for SPB10N10LG by Infineon Technologies AG
Overview of SPB10N10LG by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPB10N10LG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-SPB10N10LG-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 717 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
993 In Stock |
|
$0.4200 | Buy Now |
|
|
Rochester Electronics | SPB10N10 - SIPMOS, 10.3A, 100V, 0.21ohm, N-Channel, Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 993 |
|
$0.3595 / $0.4229 | Buy Now |
Part Details for SPB10N10LG
SPB10N10LG CAD Models
SPB10N10LG Part Data Attributes
|
|
SPB10N10LG
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPB10N10LG
Infineon Technologies AG
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10.3 A | |
| Drain-source On Resistance-Max | 0.21 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 42.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB10N10LG
This table gives cross-reference parts and alternative options found for SPB10N10LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB10N10LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU13N10L | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, DPAK-3 | Fairchild Semiconductor Corporation | SPB10N10LG vs FQU13N10L |