Part Details for SPB11N60C3 by Infineon Technologies AG
Overview of SPB11N60C3 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPB11N60C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPB11N60C3
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Mouser Electronics | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 RoHS: Compliant | 189 |
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$1.6900 / $3.3400 | Buy Now |
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Velocity Electronics | Our Stock | 206 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 650V 11A D2PAK | 1108 |
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RFQ | |
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LCSC | TO-263-3 MOSFETs ROHS | 10 |
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$2.3739 / $3.5586 | Buy Now |
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Perfect Parts Corporation | 29962 |
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RFQ | ||
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Sense Electronic Company Limited | TO263 | 31000 |
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RFQ |
Part Details for SPB11N60C3
SPB11N60C3 CAD Models
SPB11N60C3 Part Data Attributes
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SPB11N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB11N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB11N60C3
This table gives cross-reference parts and alternative options found for SPB11N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB11N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB11N60C2 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | SPB11N60C3 vs SPB11N60C2 |
| SPB11N60C2 | 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, PLASTIC, D2PAK-3 | Rochester Electronics LLC | SPB11N60C3 vs SPB11N60C2 |