Part Details for SPB11N60C3ATMA1 by Infineon Technologies AG
Overview of SPB11N60C3ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPB11N60C3ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47W3752
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Newark | Mosfet, N Channel, 650V, 11A, D2Pak, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPB11N60C3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1278 |
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$2.1700 / $3.6100 | Buy Now |
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DISTI #
SPB11N60C3ATMA1CT-ND
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DigiKey | MOSFET N-CH 650V 11A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2586 In Stock |
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Buy Now | |
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DISTI #
47W3752
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Avnet Americas | Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-263 (D2PAK), Surface Mount - Bulk (Alt: 47W3752) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks, 4 Days Container: Bulk | 13 Partner Stock |
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$2.4500 / $3.6200 | Buy Now |
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DISTI #
SPB11N60C3ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB11N60C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.4611 / $1.7858 | Buy Now |
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DISTI #
V72:2272_06378179
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Arrow Electronics | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2230 Container: Cut Strips | Americas - 109 |
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$1.4830 / $2.2520 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.38 Ohm 60 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 2000Reel |
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$1.6400 / $1.7000 | Buy Now |
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DISTI #
62984972
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Verical | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2230 | Americas - 109 |
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$1.4830 / $2.2520 | Buy Now |
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Rochester Electronics | SPB11N60 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 300 |
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$1.6100 / $1.8900 | Buy Now |
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DISTI #
47W3752
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Avnet Americas | Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-263 (D2PAK), Surface Mount - Bulk (Alt: 47W3752) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks, 4 Days Container: Bulk | 13 Partner Stock |
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$2.4500 / $3.6200 | Buy Now |
|
DISTI #
SPB11N60C3ATMA1
|
Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB11N60C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$1.4611 / $1.7858 | Buy Now |
Part Details for SPB11N60C3ATMA1
SPB11N60C3ATMA1 CAD Models
SPB11N60C3ATMA1 Part Data Attributes
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SPB11N60C3ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB11N60C3ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB11N60C3ATMA1
This table gives cross-reference parts and alternative options found for SPB11N60C3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB11N60C3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPI11N60C3HKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB11N60C3ATMA1 vs SPI11N60C3HKSA1 |
| IPP60R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs IPP60R380C6XKSA1 |
| SPB11N60S5-E6327 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs SPB11N60S5-E6327 |
| SPI11N60C3XK | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB11N60C3ATMA1 vs SPI11N60C3XK |
| Q67042-S4403 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3 | Infineon Technologies AG | SPB11N60C3ATMA1 vs Q67042-S4403 |
| SPB11N60S5E3045 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs SPB11N60S5E3045 |
| SPP11N60C3XK | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs SPP11N60C3XK |
| KP11N60D | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | KEC | SPB11N60C3ATMA1 vs KP11N60D |
| IPI60R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs IPI60R380C6XKSA1 |
| Q67040-S4395 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SPB11N60C3ATMA1 vs Q67040-S4395 |