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Part Details for SPP11N80C3 by Infineon Technologies AG
Overview of SPP11N80C3 by Infineon Technologies AG
- Distributor Offerings:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SPP11N80C3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-SPP11N80C3
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Mouser Electronics | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 RoHS: Compliant | 2992 |
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$1.4700 / $2.8400 | Buy Now |
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DISTI #
SPP11N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 11A, 156W, PG-TO220-3 Min Qty: 1 | 299 |
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$1.9500 / $2.9200 | Buy Now |
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Ameya Holding Limited | Min Qty: 13 | 467 |
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$3.3404 / $3.5144 | Buy Now |
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ComSIT USA | COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Asia - 267 |
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RFQ | |
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DISTI #
TMOSP9418
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Rutronik | N-CH 800V 11A 450mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 1350 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.2800 / $1.6500 | Buy Now |
|
DISTI #
SMC-SPP11N80C3
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 122 |
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RFQ | |
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Sense Electronic Company Limited | TO-220 | 2000 |
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RFQ | |
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Wuhan P&S | 800V,11A,N channel Power MOSFET Min Qty: 1 | 50 |
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$1.2900 / $1.8000 | Buy Now |
Part Details for SPP11N80C3
SPP11N80C3 CAD Models
SPP11N80C3 Part Data Attributes
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SPP11N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP11N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |