Part Details for SPW11N80C3 by Infineon Technologies AG
Overview of SPW11N80C3 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPW11N80C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPW11N80C3
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Mouser Electronics | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 RoHS: Compliant | 268 |
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$1.5700 / $3.3700 | Buy Now |
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Bristol Electronics | 61 |
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RFQ | ||
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Quest Components | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | 5 |
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$2.3550 / $3.5325 | Buy Now |
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DISTI #
SPW11N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 7.1A, 156W, PG-TO247-3 Min Qty: 1 | 0 |
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$2.3300 / $3.3700 | RFQ |
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Ameya Holding Limited | Min Qty: 8 | 3828 |
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$3.7584 / $3.8750 | Buy Now |
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DISTI #
TMOSP6942
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Rutronik | N-CH 800V 11A 450mOhm TO247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 4950 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.5800 / $2.0400 | Buy Now |
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Chip1Cloud | MOSFET N-CH 800V 11A TO-247 | 9020 |
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RFQ | |
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Perfect Parts Corporation | 7549 |
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RFQ |
Part Details for SPW11N80C3
SPW11N80C3 CAD Models
SPW11N80C3 Part Data Attributes
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SPW11N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW11N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW11N80C3
This table gives cross-reference parts and alternative options found for SPW11N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW11N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | SPW11N80C3 vs PHD83N03LT |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | SPW11N80C3 vs IXFH12N100F |
| SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SPW11N80C3 vs SSS7N60B |
| BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | SPW11N80C3 vs BUK465-60A |
| FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SPW11N80C3 vs FDP6035L |
| FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | SPW11N80C3 vs FQA17N40 |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPW11N80C3 vs SPB80N06S2-07 |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | SPW11N80C3 vs IXFH30N40Q |
| STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | SPW11N80C3 vs STW80N06-10 |
| IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | SPW11N80C3 vs IXFK35N50 |