Part Details for SQJQ900E-T1_GE3 by Vishay Intertechnologies
Overview of SQJQ900E-T1_GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SQJQ900E-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0703
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Newark | Mosfet, Dual, N-Ch, 40V, Powerpak 8 X 8L Rohs Compliant: Yes |Vishay SQJQ900E-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1826 |
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$2.1000 / $3.3700 | Buy Now |
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DISTI #
20AC4007
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Newark | Dual N-Channel 40-V (D-S) 175C Mosfe Rohs Compliant: Yes |Vishay SQJQ900E-T1_GE3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1100 / $1.3300 | Buy Now |
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DISTI #
SQJQ900E-T1_GE3
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Avnet Americas | Trans MOSFET Array Dual N-CH 40V 100A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SQJQ900E-T1_GE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.1663 / $1.4816 | Buy Now |
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DISTI #
78-SQJQ900E-T1_GE3
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Mouser Electronics | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant | 0 |
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$1.2400 / $2.5700 | Order Now |
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Future Electronics | Dual N-Channel 40 V 3.9 mOhm 75 W SMT Automotive Power Mosfet - PowerPAK-8x8L-Dual RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.1400 | Buy Now |
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Future Electronics | Dual N-Channel 40 V 3.9 mOhm 75 W SMT Automotive Power Mosfet - PowerPAK-8x8L-Dual RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.1400 | Buy Now |
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Bristol Electronics | 1844 |
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RFQ | ||
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DISTI #
SQJQ900E-T1_GE3
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Avnet Americas | Trans MOSFET Array Dual N-CH 40V 100A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SQJQ900E-T1_GE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.1663 / $1.4816 | Buy Now |
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DISTI #
SQJQ900E-T1-GE3
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TME | Transistor: N-MOSFET x2, unipolar, 40V, 60A, 25W, PowerPAK® 8x8L Min Qty: 1 | 0 |
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$1.5700 / $2.3600 | RFQ |
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DISTI #
SQJQ900E-T1_GE3
|
Avnet Americas | Trans MOSFET Array Dual N-CH 40V 100A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SQJQ900E-T1_GE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$1.1663 / $1.4816 | Buy Now |
Part Details for SQJQ900E-T1_GE3
SQJQ900E-T1_GE3 CAD Models
SQJQ900E-T1_GE3 Part Data Attributes
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SQJQ900E-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJQ900E-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 40V, 0.0039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 330 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 45 ns |