Part Details for SSM3J112TU by Toshiba America Electronic Components
Overview of SSM3J112TU by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SSM3J112TU
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | 8000 |
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RFQ | |
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Perfect Parts Corporation | 60480 |
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RFQ | ||
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Sense Electronic Company Limited | SOT323 | 2934 |
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RFQ |
Part Details for SSM3J112TU
SSM3J112TU CAD Models
SSM3J112TU Part Data Attributes:
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SSM3J112TU
Toshiba America Electronic Components
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Datasheet
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SSM3J112TU
Toshiba America Electronic Components
TRANSISTOR 1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-2U1A, UFM, 3 PIN, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | LEAD FREE, 2-2U1A, UFM, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.1 A | |
Drain-source On Resistance-Max | 0.79 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.8 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |