Datasheets
SSM3K7002CFU,LF(T by: Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SSM3K7002CFU,LF(T by Toshiba America Electronic Components

Overview of SSM3K7002CFU,LF(T by Toshiba America Electronic Components

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Price & Stock for SSM3K7002CFU,LF(T

Part # Distributor Description Stock Price Buy
DISTI # 01AM0629
Newark Mosfet, N-Ch, 60V, 0.17A, Sot-323 Rohs Compliant: Yes |Toshiba SSM3K7002CFU, LF(T Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.1530
  • 10 $0.1190
  • 25 $0.0730
  • 50 $0.0590
  • 100 $0.0500
  • 250 $0.0400
$0.0400 / $0.1530 Buy Now
DISTI # 83AK2800
Newark Mosfet, N-Ch, 60V, 0.17A, Sot-323 Rohs Compliant: Yes |Toshiba SSM3K7002CFU, LF(T Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.0300
  • 6,000 $0.0230
  • 12,000 $0.0170
$0.0170 / $0.0300 Buy Now
Quest Components   2699
  • 1 $0.5350
  • 188 $0.2675
  • 749 $0.2140
$0.2140 / $0.5350 Buy Now
CHIPMALL.COM LIMITED 60V 170mA 3.9��@10V,100mA 150mW 2.1V@250uA N Channel USM MOSFETs ROHS 2815
  • 5 $0.2975
  • 50 $0.2186
  • 150 $0.1890
  • 500 $0.1759
  • 2,500 $0.1680
$0.1680 / $0.2975 Buy Now
DISTI # SSM3K7002CFU,LF(T
EBV Elektronik TOSSSM3K7002CFULF(T SMALL LOW ON RESIST (Alt: SSM3K7002CFU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SSM3K7002CFU,LF(T

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SSM3K7002CFU,LF(T Part Data Attributes:

SSM3K7002CFU,LF(T Toshiba America Electronic Components
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SSM3K7002CFU,LF(T Toshiba America Electronic Components Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.7 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.7 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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