-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STB11NM60T4 by STMicroelectronics
Overview of STB11NM60T4 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for STB11NM60T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
57P0536
|
Newark | Power Mosfet, N Channel, 5.5 A, 650 V, 400 Mohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STB11NM60T4 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
33R1098
|
Newark | Mosfet, N Channel, 650V, 11A, D2Pak, Transistor Polarity:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:5.5A, On Resistance Rds(On):0.4Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STB11NM60T4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.5300 / $2.9000 | Buy Now |
|
DISTI #
497-6545-1-ND
|
DigiKey | MOSFET N-CH 650V 11A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
522 In Stock |
|
$1.9860 / $4.2500 | Buy Now |
|
DISTI #
STB11NM60T4
|
Avnet Americas | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB11NM60T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$2.0734 / $2.3594 | Buy Now |
|
DISTI #
511-STB11NM60
|
Mouser Electronics | MOSFET N-Ch 600 Volt 11 Amp RoHS: Compliant | 986 |
|
$1.9800 / $4.2500 | Buy Now |
|
|
STMicroelectronics | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 986 |
|
$2.1500 / $4.1700 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 36000Reel |
|
$1.9500 / $2.0400 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$1.9500 / $2.0000 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$1.9500 / $2.0000 | Buy Now |
|
|
Bristol Electronics | 13716 |
|
RFQ |
Part Details for STB11NM60T4
STB11NM60T4 CAD Models
STB11NM60T4 Part Data Attributes
|
|
STB11NM60T4
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STB11NM60T4
STMicroelectronics
N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Date Of Intro | 1980-01-04 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB11NM60T4
This table gives cross-reference parts and alternative options found for STB11NM60T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB11NM60T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP11N60CFD | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60T4 vs SPP11N60CFD |
| STP11NM60FD | N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package | STMicroelectronics | STB11NM60T4 vs STP11NM60FD |
| STB11NM60A-1 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | STB11NM60T4 vs STB11NM60A-1 |
| SPP11N60CFDXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60T4 vs SPP11N60CFDXK |
| SPP11N60CFDXKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60T4 vs SPP11N60CFDXKSA1 |
| SPP11N60CFDHKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60T4 vs SPP11N60CFDHKSA1 |
| STD11NM60ND | N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package | STMicroelectronics | STB11NM60T4 vs STD11NM60ND |