Datasheets
STB160N75F3 by:

N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package

Part Details for STB160N75F3 by STMicroelectronics

Overview of STB160N75F3 by STMicroelectronics

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Applications Industrial Automation

Price & Stock for STB160N75F3

Part # Distributor Description Stock Price Buy
DISTI # 57P0565
Newark Mosfet Transistor, N Channel, 60 A, 75 V, 3.5 Mohm, 10 V, 4 V |Stmicroelectronics STB160N75F3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-7937-1-ND
DigiKey MOSFET N-CH 75V 120A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 934
In Stock
  • 1 $4.9000
  • 10 $4.1120
  • 100 $3.3269
  • 500 $2.9573
  • 1,000 $2.5322
  • 2,000 $2.3843
$2.3843 / $4.9000 Buy Now
DISTI # STB160N75F3
Avnet Americas Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB160N75F3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.7176
  • 2,000 $2.6627
  • 4,000 $2.6077
  • 6,000 $2.5528
  • 8,000 $2.4979
  • 10,000 $2.4430
  • 100,000 $2.3881
$2.3881 / $2.7176 Buy Now
DISTI # 511-STB160N75F3
Mouser Electronics MOSFET 75V 3.5mOhm N-Channel RoHS: Compliant 1989
  • 1 $4.9000
  • 10 $4.1200
  • 25 $3.8900
  • 100 $3.3300
  • 250 $3.1500
  • 500 $2.9600
  • 1,000 $2.3600
  • 2,000 $2.3500
$2.3500 / $4.9000 Buy Now
STMicroelectronics N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 1989
  • 1 $4.8000
  • 10 $4.0400
  • 25 $3.8100
  • 100 $3.2600
  • 250 $3.0900
  • 500 $2.9000
$2.9000 / $4.8000 Buy Now
Future Electronics N-Channel 75 V 3.7 mΩ Surface Mount STripFET™ Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 3000
Reel
  • 1,000 $2.3900
  • 2,000 $2.3500
  • 3,000 $2.3300
  • 4,000 $2.3100
$2.3100 / $2.3900 Buy Now
Future Electronics N-Channel 75 V 3.7 mΩ Surface Mount STripFET™ Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.3100
$2.3100 Buy Now
Future Electronics N-Channel 75 V 3.7 mΩ Surface Mount STripFET™ Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.3100
$2.3100 Buy Now
DISTI # STB160N75F3
Avnet Americas Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB160N75F3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.7176
  • 2,000 $2.6627
  • 4,000 $2.6077
  • 6,000 $2.5528
  • 8,000 $2.4979
  • 10,000 $2.4430
  • 100,000 $2.3881
$2.3881 / $2.7176 Buy Now
DISTI # STB160N75F3
Avnet Americas Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB160N75F3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.7176
  • 2,000 $2.6627
  • 4,000 $2.6077
  • 6,000 $2.5528
  • 8,000 $2.4979
  • 10,000 $2.4430
  • 100,000 $2.3881
$2.3881 / $2.7176 Buy Now
DISTI # STB160N75F3
Avnet Silica Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: STB160N75F3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
Chip1Cloud MOSFET N-CH 75V 120A D2PAK 8100
RFQ
DISTI # 1751982
Farnell MOSFET, N CH, 75V, 120A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $4.2847
  • 25 $3.7475
  • 100 $3.3353
  • 250 $3.0979
  • 500 $2.7981
$2.7981 / $4.2847 Buy Now
Perfect Parts Corporation   29659
RFQ

Part Details for STB160N75F3

STB160N75F3 CAD Models

STB160N75F3 Part Data Attributes

STB160N75F3 STMicroelectronics
Buy Now Datasheet
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STB160N75F3 STMicroelectronics N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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