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Transistors / Power Field-Effect Transistors / STD10PF06
Datasheets
STD10PF06 by:

P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET

Part Details for STD10PF06 by STMicroelectronics

Overview of STD10PF06 by STMicroelectronics

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Price & Stock for STD10PF06

Part # Distributor Description Stock Price Buy
DISTI # STD10PF06
Avnet Americas Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: STD10PF06) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
RFQ
DISTI # STD10PF06
Avnet Americas Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: STD10PF06) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
RFQ
DISTI # STD10PF06
Avnet Americas Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: STD10PF06) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
RFQ

Part Details for STD10PF06

STD10PF06 CAD Models

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STD10PF06 Part Data Attributes

Parametric Data
STD10PF06 STMicroelectronics
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STD10PF06 STMicroelectronics P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252AA
Package Description DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD10PF06

This table gives cross-reference parts and alternative options found for STD10PF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10PF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD7P06 Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation STD10PF06 vs FQD7P06
SFR9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 Fairchild Semiconductor Corporation STD10PF06 vs SFR9024
SFR9024TF 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC STD10PF06 vs SFR9024TF
SFW9Z14TM Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation STD10PF06 vs SFW9Z14TM
SPD08P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Infineon Technologies AG STD10PF06 vs SPD08P05
SFR9024TF Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation STD10PF06 vs SFR9024TF
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation STD10PF06 vs RFD8P06ESM9A
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation STD10PF06 vs RFD8P06ESM
FQD7P06TM Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL onsemi STD10PF06 vs FQD7P06TM
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor STD10PF06 vs SFW9Z24

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