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Part Details for STD11N65M2 by STMicroelectronics
Overview of STD11N65M2 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STD11N65M2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
40Y2594
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Newark | Mosfet, N-Ch, 650V, 7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Qualification:-Rohs Compliant: Yes |Stmicroelectronics STD11N65M2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 302 |
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$0.6580 | Buy Now |
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DISTI #
26Y5740
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Newark | Hv Mosfet Mdmesh |Stmicroelectronics STD11N65M2 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
497-15048-1-ND
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DigiKey | MOSFET N-CH 650V 7A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
98 In Stock |
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$0.6552 / $1.5600 | Buy Now |
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DISTI #
STD11N65M2
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Avnet Americas | Trans MOSFET N-CH 650V 7A 3-Pin DPAK T/R - Tape and Reel (Alt: STD11N65M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.7313 / $0.7627 | Buy Now |
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DISTI #
40Y2594
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Avnet Americas | Trans MOSFET N-CH 650V 7A 3-Pin DPAK T/R - Product that comes on tape, but is not reeled (Alt: 40Y2594) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 302 Partner Stock |
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$1.3300 / $1.9400 | Buy Now |
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DISTI #
511-STD11N65M2
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Mouser Electronics | MOSFET N-channel 650 V, 0.60 Ohm typ 7 A MDmesh M2 Power MOSFET in DPAK package RoHS: Compliant | 1561 |
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$0.6550 / $1.5600 | Buy Now |
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STMicroelectronics | N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 1561 |
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$0.8500 / $1.5300 | Buy Now |
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Future Electronics | N-Channel 650 V 7 A 85 W Surface Mount MDmesh™ M2 Power MOSFET - TO-252 (DPAK) RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.6650 / $0.6900 | Buy Now |
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Future Electronics | N-Channel 650 V 7 A 85 W Surface Mount MDmesh™ M2 Power MOSFET - TO-252 (DPAK) RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.6650 / $0.6900 | Buy Now |
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DISTI #
31586807
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Verical | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 39 Package Multiple: 1 | Americas - 4950 |
|
$0.4513 / $0.8088 | Buy Now |
Part Details for STD11N65M2
STD11N65M2 CAD Models
STD11N65M2 Part Data Attributes
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STD11N65M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD11N65M2
STMicroelectronics
N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | BULK: 2500 | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.68 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.9 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 85 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |