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N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57P0716
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Newark | Mosfet, N Ch, 600V, 10A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD11NM60ND Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
497-8477-1-ND
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DigiKey | MOSFET N-CH 600V 10A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.6684 / $3.5700 | Buy Now |
DISTI #
STD11NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.8619 / $1.9420 | Buy Now |
DISTI #
511-STD11NM60ND
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Mouser Electronics | MOSFET N-channel 600V, 10A FDMesh II RoHS: Compliant | 0 |
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$1.7400 / $3.5700 | Order Now |
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STMicroelectronics | N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 0 |
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$2.1200 / $3.5000 | Buy Now |
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Future Electronics | N-Channel 600 V 0.45 Ohm Surface Mount FDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.5700 | Buy Now |
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Future Electronics | N-Channel 600 V 0.45 Ohm Surface Mount FDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.5700 | Buy Now |
DISTI #
STD11NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.8619 / $1.9420 | Buy Now |
DISTI #
STD11NM60ND
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TME | Transistor: N-MOSFET, unipolar, 600V, 6.3A, 90W, DPAK Min Qty: 1 | 0 |
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$1.3800 / $2.0700 | RFQ |
DISTI #
STD11NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD11NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$1.8619 / $1.9420 | Buy Now |
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STD11NM60ND
STMicroelectronics
Buy Now
Datasheet
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STD11NM60ND
STMicroelectronics
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252 | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD11NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD11NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STB11NM60T4 | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package | STMicroelectronics | STD11NM60ND vs STB11NM60T4 |
SPP11N60CFD | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD11NM60ND vs SPP11N60CFD |
STP11NM60FD | N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package | STMicroelectronics | STD11NM60ND vs STP11NM60FD |
STB11NM60A-1 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | STD11NM60ND vs STB11NM60A-1 |
SPP11N60CFDXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD11NM60ND vs SPP11N60CFDXK |
SPP11N60CFDXKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD11NM60ND vs SPP11N60CFDXKSA1 |
SPP11N60CFDHKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD11NM60ND vs SPP11N60CFDHKSA1 |