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STGP10M65DF2 by: STMicroelectronics

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Part Details for STGP10M65DF2 by STMicroelectronics

Overview of STGP10M65DF2 by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for STGP10M65DF2

Part # Distributor Description Stock Price Buy
DISTI # 52Y7735
Newark Igbt Single Transistor, 20 A, 1.55 V, 115 W, 650 V, To-220, 3 Rohs Compliant: Yes |Stmicroelectronics STGP10M65DF2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 910
  • 1 $0.9180
$0.9180 Buy Now
DISTI # 497-15840-5-ND
DigiKey IGBT 650V 10A TO-220AB Min Qty: 2000 Lead time: 18 Weeks Container: Tube Temporarily Out of Stock
  • 2,000 $0.5826
$0.5826 Buy Now
DISTI # STGP10M65DF2
Avnet Americas Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220AB Tube - Rail/Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.6149
  • 4,000 $0.6022
  • 6,000 $0.5895
$0.5895 / $0.6149 Buy Now
DISTI # 511-STGP10M65DF2
Mouser Electronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss RoHS: Compliant 843
  • 1 $1.2200
  • 10 $1.0200
  • 100 $0.9370
  • 1,000 $0.6930
  • 2,000 $0.5820
$0.5820 / $1.2200 Buy Now
DISTI # V99:2348_17652361
Arrow Electronics Trans IGBT Chip N-CH 650V 20A 115W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 1628 Americas - 263
  • 1 $0.5555
  • 10 $0.5186
  • 100 $0.5017
  • 1,000 $0.4478
  • 2,000 $0.4122
$0.4122 / $0.5555 Buy Now
STMicroelectronics Trench gate field-stop IGBT M series, 650 V 10 A low loss RoHS: Compliant Min Qty: 1 843
  • 1 $1.2000
  • 10 $1.0000
  • 100 $0.9200
  • 500 $0.9200
$0.9200 / $1.2000 Buy Now
Future Electronics TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.6150
  • 2,000 $0.6000
  • 3,000 $0.5950
  • 4,000 $0.5900
  • 5,000 $0.5700
$0.5700 / $0.6150 Buy Now
Future Electronics TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.6150
  • 2,000 $0.6000
  • 3,000 $0.5950
  • 4,000 $0.5900
  • 5,000 $0.5700
$0.5700 / $0.6150 Buy Now
Future Electronics TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.6800
  • 200 $0.6500
  • 750 $0.6200
  • 2,000 $0.6000
  • 5,000 $0.5700
$0.5700 / $0.6800 Buy Now
DISTI # 25950162
Verical Trans IGBT Chip N-CH 650V 20A 115W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 20 Package Multiple: 1 Date Code: 1628 Americas - 263
  • 20 $0.5186
  • 100 $0.5017
  • 1,000 $0.4478
  • 2,000 $0.4122
$0.4122 / $0.5186 Buy Now
DISTI # 30603007
Verical Trans IGBT Chip N-CH 650V 20A 115W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 23 Package Multiple: 1 Americas - 50
  • 23 $1.4125
  • 50 $1.4000
$1.4000 / $1.4125 Buy Now
DISTI # STGP10M65DF2
Avnet Americas Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220AB Tube - Rail/Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.6149
  • 4,000 $0.6022
  • 6,000 $0.5895
$0.5895 / $0.6149 Buy Now
DISTI # STGP10M65DF2
TME Transistor: IGBT, 650V, 10A, 115W, TO220AB Min Qty: 1 36
  • 1 $1.2100
  • 3 $1.1500
  • 10 $1.0300
  • 50 $1.0000
  • 100 $0.9700
$0.9700 / $1.2100 Buy Now
Ameya Holding Limited TO-220/Trench gate field-stop IGBT, M series 650 V, 10 A low loss 1828
RFQ
ComSIT USA TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 10 A LOW LOSS Insulated Gate Bipolar Transistor, 20A I(C), 650V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant Europe - 1000
RFQ
DISTI # STGP10M65DF2
Avnet Silica Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220AB Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 900
Buy Now
Chip1Cloud IGBT 650V 10A TO-220AB 50
RFQ
DISTI # C1S730201010145
Chip1Stop IGBT discrete RoHS: Compliant Container: Tube 50
  • 1 $1.1300
  • 50 $1.1200
$1.1200 / $1.1300 Buy Now
DISTI # STGP10M65DF2
EBV Elektronik Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220AB Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now
DISTI # 2490223
element14 Asia-Pacific IGBT, SINGLE, 650V, 20A, TO-220-3 RoHS: Compliant Min Qty: 1 Container: Each 910
  • 1 $1.5263
  • 10 $1.2535
  • 100 $0.9659
  • 500 $0.8258
  • 1,000 $0.7964
  • 5,000 $0.7595
$0.7595 / $1.5263 Buy Now
DISTI # 2490223
Farnell IGBT, SINGLE, 650V, 20A, TO-220-3 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 910
  • 1 $1.6483
  • 10 $1.2487
  • 100 $0.9128
  • 500 $0.7742
  • 1,000 $0.7617
  • 5,000 $0.7492
$0.7492 / $1.6483 Buy Now

Part Details for STGP10M65DF2

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STGP10M65DF2 Part Data Attributes:

Parametric Data
STGP10M65DF2 STMicroelectronics
Buy Now Datasheet
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STGP10M65DF2 STMicroelectronics Trench gate field-stop IGBT M series, 650 V 10 A low loss
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 260 ns
Turn-on Time-Nom (ton) 27 ns
VCEsat-Max 2 V

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