-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
40Y2606
|
Newark | Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP11N65M2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$1.3200 | Buy Now |
DISTI #
497-STP11N65M2-ND
|
DigiKey | MOSFET N-CH 650V 7A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
1988 In Stock |
|
$0.7250 / $1.7300 | Buy Now |
DISTI #
STP11N65M2
|
Avnet Americas | Trans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP11N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$0.7569 / $0.8613 | Buy Now |
DISTI #
511-STP11N65M2
|
Mouser Electronics | MOSFET N-channel 650 V, 0.60 Ohm typ 7 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant | 1013 |
|
$0.7250 / $1.7300 | Buy Now |
|
STMicroelectronics | N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 1013 |
|
$0.9400 / $1.7000 | Buy Now |
|
Future Electronics | N-Channel 650 V 7A (Tc) 85W (Tc) Through Hole TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1100 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.7350 / $0.8700 | Buy Now |
|
Bristol Electronics | 990 |
|
RFQ | ||
|
Quest Components | 792 |
|
$1.2960 / $3.4560 | Buy Now | |
DISTI #
STP11N65M2
|
Avnet Americas | Trans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP11N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$0.7569 / $0.8613 | Buy Now |
DISTI #
STP11N65M2
|
TME | Transistor: N-MOSFET, MDmesh™ M2, unipolar, 650V, 4.4A, Idm: 28A Min Qty: 1 | 0 |
|
$1.1600 / $1.7300 | RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STP11N65M2
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP11N65M2
STMicroelectronics
N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 2500 | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.68 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 0.9 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 85 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |