Datasheets
STP33N60DM2 by: STMicroelectronics

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

Part Details for STP33N60DM2 by STMicroelectronics

Overview of STP33N60DM2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP33N60DM2

Part # Distributor Description Stock Price Buy
DISTI # 79Y9468
Newark Mosfet, N-Ch, 600V, 24A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.11Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STP33N60DM2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 100
  • 1 $5.2400
  • 10 $4.9100
  • 25 $4.5900
  • 50 $4.2500
  • 100 $3.7100
  • 250 $3.5300
  • 500 $3.3600
$3.3600 / $5.2400 Buy Now
DISTI # 497-16352-5-ND
DigiKey MOSFET N-CH 600V 24A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube 558
In Stock
  • 1 $4.3600
  • 50 $3.4572
  • 100 $2.9633
  • 500 $2.6341
  • 1,000 $2.2554
  • 2,000 $2.1237
$2.1237 / $4.3600 Buy Now
DISTI # STP33N60DM2
Avnet Americas Transistor MOSFET N-CH 600V 24A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP33N60DM2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.4205
  • 2,000 $2.3716
  • 4,000 $2.3228
  • 6,000 $2.2738
  • 8,000 $2.2250
  • 10,000 $2.1761
  • 100,000 $2.1271
$2.1271 / $2.4205 Buy Now
DISTI # 511-STP33N60DM2
Mouser Electronics MOSFET N-channel 600 V, 0.110 Ohm typ 24 A MDmesh DM2 Power MOSFET in TO-220 package RoHS: Compliant 890
  • 1 $4.3600
  • 25 $3.4600
  • 100 $2.9700
  • 500 $2.6400
  • 1,000 $2.2400
  • 2,000 $2.1200
$2.1200 / $4.3600 Buy Now
STMicroelectronics N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 890
  • 1 $4.2700
  • 10 $4.2700
  • 25 $3.3900
  • 100 $2.9100
  • 250 $2.9100
  • 500 $2.5900
$2.5900 / $4.2700 Buy Now
Future Electronics N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $2.2000
$2.2000 Buy Now
Future Electronics N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $2.2000
$2.2000 Buy Now
Future Electronics N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $2.4100
  • 150 $2.3500
  • 250 $2.3200
  • 1,000 $2.2500
  • 1,500 $2.2000
$2.2000 / $2.4100 Buy Now
Bristol Electronics   295
RFQ
Quest Components   236
  • 1 $5.8320
  • 19 $3.8880
  • 65 $3.5964
$3.5964 / $5.8320 Buy Now
DISTI # STP33N60DM2
Avnet Americas Transistor MOSFET N-CH 600V 24A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP33N60DM2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.4205
  • 2,000 $2.3716
  • 4,000 $2.3228
  • 6,000 $2.2738
  • 8,000 $2.2250
  • 10,000 $2.1761
  • 100,000 $2.1271
$2.1271 / $2.4205 Buy Now
DISTI # STP33N60DM2
TME Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 600V, 15.5A, Idm: 96A Min Qty: 1 0
  • 1 $5.4000
  • 5 $4.8600
  • 25 $4.2900
  • 100 $3.8600
  • 500 $3.6000
$3.6000 / $5.4000 RFQ
DISTI # STP33N60DM2
Avnet Silica Transistor MOSFET N-CH 600V 24A 3-Pin TO-220 Tube (Alt: STP33N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 1600
Buy Now
DISTI # STP33N60DM2
EBV Elektronik Transistor MOSFET N-CH 600V 24A 3-Pin TO-220 Tube (Alt: STP33N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP33N60DM2

STP33N60DM2 CAD Models

STP33N60DM2 Part Data Attributes:

STP33N60DM2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP33N60DM2 STMicroelectronics N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 96 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP33N60DM2

This table gives cross-reference parts and alternative options found for STP33N60DM2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP33N60DM2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB33N60DM2 N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package STMicroelectronics STP33N60DM2 vs STB33N60DM2

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