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Transistors / Power Field-Effect Transistors / STS11NF30L
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STS11NF30L by: STMicroelectronics

N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET

Part Details for STS11NF30L by STMicroelectronics

Overview of STS11NF30L by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STS11NF30L

Part # Distributor Description Stock Price Buy
STMicroelectronics N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET RoHS: Compliant Min Qty: 1 7
  • 1 $1.1000
  • 10 $0.9800
  • 25 $0.9300
  • 100 $0.7000
  • 500 $0.5900
$0.5900 / $1.1000 Buy Now
Bristol Electronics   47
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 153
  • 1 $0.8502
  • 22 $0.5101
  • 99 $0.3968
$0.3968 / $0.8502 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1600
  • 1 $1.4170
  • 283 $0.5668
  • 1,412 $0.4960
$0.4960 / $1.4170 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 24
  • 1 $2.5000
  • 3 $2.0000
  • 11 $1.5000
$1.5000 / $2.5000 Buy Now
ComSIT USA 30 V-11 A-0.0085 OHM SO-8 N-CHANNEL LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 2500
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 40
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now
DISTI # 9935711
element14 Asia-Pacific MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $0.6284
  • 10 $0.5200
  • 100 $0.4211
  • 500 $0.3640
  • 1,000 $0.3003
  • 5,000 $0.2878
$0.2878 / $0.6284 Buy Now
DISTI # 9935711RL
element14 Asia-Pacific MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.4211
  • 500 $0.3640
  • 1,000 $0.3003
  • 5,000 $0.2878
$0.2878 / $0.4211 Buy Now
DISTI # 9935711
Farnell MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Cut Tape 0
  • 1 $0.8369
  • 25 $0.7244
  • 100 $0.6120
  • 250 $0.5121
  • 800 $0.3697
  • 3,000 $0.3322
  • 8,000 $0.3198
  • 20,000 $0.3135
$0.3135 / $0.8369 Buy Now
DISTI # 9935711RL
Farnell MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 100 Lead time: 9 Weeks, 1 Days Container: Reel 0
  • 100 $0.6120
  • 250 $0.5121
  • 800 $0.3697
  • 3,000 $0.3322
  • 8,000 $0.3198
  • 20,000 $0.3135
$0.3135 / $0.6120 Buy Now

Part Details for STS11NF30L

STS11NF30L CAD Models

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STS11NF30L Part Data Attributes

Parametric Data
STS11NF30L STMicroelectronics
Buy Now Datasheet
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STS11NF30L STMicroelectronics N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description ROHS COMPLIANT, SOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STS11NF30L

This table gives cross-reference parts and alternative options found for STS11NF30L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STS11NF30L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7471TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier STS11NF30L vs IRF7471TRPBF
FDS8858CZ Power Field-Effect Transistor, 8.6A I(D), 30V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 8 PIN Fairchild Semiconductor Corporation STS11NF30L vs FDS8858CZ
IRF7413TRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier STS11NF30L vs IRF7413TRPBF
PHN1013 TRANSISTOR 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors STS11NF30L vs PHN1013
IRF7460PBF Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier STS11NF30L vs IRF7460PBF
SI4800 TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors STS11NF30L vs SI4800
UPA2700GR 17A, 30V, 0.0084ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 Renesas Electronics Corporation STS11NF30L vs UPA2700GR
SI4890DY-T1-E3 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies STS11NF30L vs SI4890DY-T1-E3
PHN1018 TRANSISTOR 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors STS11NF30L vs PHN1018
IRF7821 Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier STS11NF30L vs IRF7821

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