Part Details for STSJ100NH3LL by STMicroelectronics
Overview of STSJ100NH3LL by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for STSJ100NH3LL
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 20 |
|
RFQ | ||
|
Bristol Electronics | Min Qty: 2 | 45 |
|
$1.7812 / $2.8500 | Buy Now |
|
Quest Components | 100 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET | 36 |
|
$1.4250 / $3.8000 | Buy Now |
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 30 |
|
$1.0000 / $1.5400 | Buy Now |
Part Details for STSJ100NH3LL
STSJ100NH3LL CAD Models
STSJ100NH3LL Part Data Attributes
|
STSJ100NH3LL
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STSJ100NH3LL
STMicroelectronics
100A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SO-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SOT | |
Package Description | POWER, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STSJ100NH3LL
This table gives cross-reference parts and alternative options found for STSJ100NH3LL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STSJ100NH3LL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HAT2134H | 60A, 20V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | Renesas Electronics Corporation | STSJ100NH3LL vs HAT2134H |
FDS7288N3 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | STSJ100NH3LL vs FDS7288N3 |
HAT2099H-EL-E | Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | STSJ100NH3LL vs HAT2099H-EL-E |
HAT2165H-EL-E | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | STSJ100NH3LL vs HAT2165H-EL-E |
FDS7088N3 | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | STSJ100NH3LL vs FDS7088N3 |
HAT2096H | Power Field-Effect Transistor, 40A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 | Hitachi Ltd | STSJ100NH3LL vs HAT2096H |
HAT2164H-EL-E | Nch Single Power Mosfet 30V 60A 3.1Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | STSJ100NH3LL vs HAT2164H-EL-E |
FDMS7670 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | STSJ100NH3LL vs FDMS7670 |
BSC052N03S | Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 | Infineon Technologies AG | STSJ100NH3LL vs BSC052N03S |
BSC0908NS | Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | STSJ100NH3LL vs BSC0908NS |