Part Details for STU1HN60K3 by STMicroelectronics
Overview of STU1HN60K3 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Price & Stock for STU1HN60K3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X3747
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Newark | Dfd Thyr Triac & Rectifier |Stmicroelectronics STU1HN60K3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.4450 | Buy Now |
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DISTI #
497-13787-5-ND
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DigiKey | MOSFET N-CH 600V 1.2A IPAK Min Qty: 1 Lead time: 52 Weeks Container: Tube |
1899 In Stock |
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$0.4350 / $0.9900 | Buy Now |
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DISTI #
STU1HN60K3
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TME | Transistor: N-MOSFET, SuperMESH3™, unipolar, 600V, 0.76A, 27W, IPAK Min Qty: 1 | 89 |
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$0.1990 / $0.5900 | Buy Now |
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ComSIT USA | 600 V, 1.2 A, 6.7 OHM TYP SUPERMESH3 N-CHANNEL POWER MOSFET IN IPAK PACKAGE Power Field-Effect Transistor RoHS: Compliant | Europe - 1050 |
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RFQ | |
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DISTI #
STU1HN60K3
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Avnet Silica | Trans MOSFET N-CH 600V 1.2A 3-Pin IPAK Tube (Alt: STU1HN60K3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 1 Weeks, 6 Days | Silica - 0 |
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Buy Now |
Part Details for STU1HN60K3
STU1HN60K3 CAD Models
STU1HN60K3 Part Data Attributes:
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STU1HN60K3
STMicroelectronics
Buy Now
Datasheet
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STU1HN60K3
STMicroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.76 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 27 W | |
| Pulsed Drain Current-Max (IDM) | 4.8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |