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Part Details for STW11NK100Z by STMicroelectronics
Overview of STW11NK100Z by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for STW11NK100Z
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59M2217
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Newark | Power Mosfet, N Channel, 8.3 A, 1 Kv, 1.38 Ohm, 10 V, 3.75 V Rohs Compliant: No |Stmicroelectronics STW11NK100Z Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 17083 |
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$3.0700 / $6.4200 | Buy Now |
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DISTI #
497-3255-5-ND
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DigiKey | MOSFET N-CH 1000V 8.3A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
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$3.4089 / $6.4100 | Buy Now |
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DISTI #
STW11NK100Z
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Avnet Americas | Trans MOSFET N-CH 1KV 8.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NK100Z) RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$3.4819 / $3.9621 | Buy Now |
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DISTI #
511-STW11NK100Z
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Mouser Electronics | MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH RoHS: Compliant | 0 |
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$3.5900 / $6.4100 | Order Now |
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STMicroelectronics | N-channel 1000 V, 1.10 Ohm typ. 8.3 A SuperMESH Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 | 0 |
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$3.9700 / $6.2800 | Buy Now |
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Future Electronics | N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3500 / $3.9100 | Buy Now |
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Future Electronics | N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3500 / $3.8200 | Buy Now |
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Future Electronics | N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3500 / $3.9100 | Buy Now |
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Future Electronics | N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3500 / $3.6900 | Buy Now |
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Future Electronics | N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Container: Tube | 0Tube |
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$3.3500 / $3.8200 | Buy Now |
Part Details for STW11NK100Z
STW11NK100Z CAD Models
STW11NK100Z Part Data Attributes
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STW11NK100Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW11NK100Z
STMicroelectronics
N-channel 1000 V, 1.10 Ohm typ. 8.3 A SuperMESH Power MOSFET in a TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247AC | |
| Package Description | ROHS COMPLIANT, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 550 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 8.3 A | |
| Drain-source On Resistance-Max | 1.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 33.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW11NK100Z
This table gives cross-reference parts and alternative options found for STW11NK100Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW11NK100Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | STW11NK100Z vs PHD83N03LT |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STW11NK100Z vs IXFH12N100F |
| SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | STW11NK100Z vs SSS7N60B |
| BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STW11NK100Z vs BUK465-60A |
| FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STW11NK100Z vs FDP6035L |
| FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | STW11NK100Z vs FQA17N40 |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STW11NK100Z vs SPB80N06S2-07 |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | STW11NK100Z vs IXFH30N40Q |
| STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | STW11NK100Z vs STW80N06-10 |
| IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | STW11NK100Z vs IXFK35N50 |