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Transistors / Power Field-Effect Transistors / STW11NM80
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STW11NM80 by:

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Part Details for STW11NM80 by STMicroelectronics

Overview of STW11NM80 by STMicroelectronics

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Price & Stock for STW11NM80

Part # Distributor Description Stock Price Buy
DISTI # 57P2583
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW11NM80 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-4420-5-ND
DigiKey MOSFET N-CH 800V 11A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube 70
In Stock
  • 1 $5.6600
  • 30 $4.4837
  • 120 $3.8431
  • 510 $3.4161
  • 1,020 $2.9250
  • 2,010 $2.7542
$2.7542 / $5.6600 Buy Now
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1391
  • 1,200 $3.0757
  • 2,400 $3.0123
  • 3,600 $2.9489
  • 4,800 $2.8855
  • 6,000 $2.8221
  • 60,000 $2.7586
$2.7586 / $3.1391 Buy Now
DISTI # 511-STW11NM80
Mouser Electronics MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS: Compliant 189
  • 1 $5.6600
  • 10 $5.5100
  • 25 $4.4800
  • 100 $4.3700
  • 250 $3.4200
  • 600 $2.9200
  • 1,200 $2.7500
$2.7500 / $5.6600 Buy Now
DISTI # E02:0323_01883356
Arrow Electronics Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2411 Europe - 130
  • 1 $4.2955
  • 10 $4.1953
  • 25 $2.6708
  • 100 $2.6433
  • 250 $2.6178
  • 600 $2.5217
  • 1,200 $2.3695
$2.3695 / $4.2955 Buy Now
STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 190
  • 1 $5.5500
  • 10 $5.4000
  • 25 $4.3900
  • 100 $4.2800
  • 250 $3.3500
$3.3500 / $5.5500 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 180
Tube
  • 30 $3.0100
  • 120 $2.9100
  • 450 $2.8300
  • 750 $2.8000
  • 1,500 $2.7000
$2.7000 / $3.0100 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.9900
  • 90 $2.9100
  • 300 $2.8300
  • 600 $2.7900
  • 1,200 $2.7000
$2.7000 / $2.9900 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.9900
  • 90 $2.9100
  • 300 $2.8300
  • 600 $2.7900
  • 1,200 $2.7000
$2.7000 / $2.9900 Buy Now
DISTI # 78966980
Verical Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube Min Qty: 3 Package Multiple: 1 Date Code: 2411 Americas - 129
  • 3 $4.2858
  • 10 $4.1859
  • 25 $2.6648
  • 100 $2.6374
  • 250 $2.6119
  • 600 $2.5160
  • 1,200 $2.3641
$2.3641 / $4.2858 Buy Now
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1391
  • 1,200 $3.0757
  • 2,400 $3.0123
  • 3,600 $2.9489
  • 4,800 $2.8855
  • 6,000 $2.8221
  • 60,000 $2.7586
$2.7586 / $3.1391 Buy Now
DISTI # STW11NM80
TME Transistor: N-MOSFET, unipolar, 800V, 8A, 150W, TO247 Min Qty: 1 0
  • 1 $3.8200
  • 3 $3.4400
  • 10 $3.0400
  • 30 $2.7300
$2.7300 / $3.8200 RFQ
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1391
  • 1,200 $3.0757
  • 2,400 $3.0123
  • 3,600 $2.9489
  • 4,800 $2.8855
  • 6,000 $2.8221
  • 60,000 $2.7586
$2.7586 / $3.1391 Buy Now
DISTI # STW11NM80
Avnet Silica Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days Silica - 210
Buy Now
DISTI # STW11NM80
EBV Elektronik Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 1752196
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $6.8446
  • 10 $6.1631
  • 25 $5.8260
  • 100 $5.0492
  • 600 $4.2944
$4.2944 / $6.8446 Buy Now
DISTI # 1752196
Farnell MOSFET, N CH, 800V, 11A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $3.7219
$3.7219 Buy Now
Perfect Parts Corporation   1710
RFQ

Part Details for STW11NM80

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STW11NM80 Part Data Attributes

Parametric Data
STW11NM80 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW11NM80 STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW11NM80

This table gives cross-reference parts and alternative options found for STW11NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW11NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHD83N03LT 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 NXP Semiconductors STW11NM80 vs PHD83N03LT
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STW11NM80 vs IXFH12N100F
SSS7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs SSS7N60B
BUK465-60A 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors STW11NM80 vs BUK465-60A
FDP6035L Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs FDP6035L
FQA17N40 Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs FQA17N40
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW11NM80 vs SPB80N06S2-07
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STW11NM80 vs IXFH30N40Q
STW80N06-10 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics STW11NM80 vs STW80N06-10
IXFK35N50 Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN IXYS Corporation STW11NM80 vs IXFK35N50

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