Part Details for SUM90140E-GE3 by Vishay Intertechnologies
Overview of SUM90140E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
Electronic Manufacturing
Price & Stock for SUM90140E-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86Y1093
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Newark | Mosfet, N-Ch, 200V, 90A, 175Deg C, 375W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SUM90140E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 680 |
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$1.7800 / $2.1000 | Buy Now |
DISTI #
SUM90140E-GE3
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Avnet Americas | Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$1.9949 | Buy Now |
DISTI #
86Y1093
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Avnet Americas | Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 86Y1093) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 680 Partner Stock |
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$2.0800 / $3.0700 | Buy Now |
DISTI #
78-SUM90140E-GE3
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Mouser Electronics | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant | 155 |
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$1.3700 / $2.9900 | Buy Now |
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Future Electronics | N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.3900 / $1.4400 | Buy Now |
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Future Electronics | N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks Container: Reel | 0Reel |
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$1.3900 / $1.4400 | Buy Now |
DISTI #
SUM90140E-GE3
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TTI | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$1.3800 / $1.4700 | Buy Now |
DISTI #
SUM90140E-GE3
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TME | Transistor: N-MOSFET, unipolar, 200V, 75A, 125W, D2PAK,TO263 Min Qty: 1 | 0 |
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$2.3400 / $3.2700 | RFQ |
DISTI #
SUM90140E-GE3
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Avnet Asia | Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 77 Weeks, 0 Days | 0 |
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$2.1477 / $2.4200 | Buy Now |
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Chip1Cloud | MOSFET N-CH 200V 90A D2PAK | 3370 |
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RFQ |
Part Details for SUM90140E-GE3
SUM90140E-GE3 CAD Models
SUM90140E-GE3 Part Data Attributes:
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SUM90140E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUM90140E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks, 1 Day | |
Date Of Intro | 2016-05-02 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |