Datasheets
SUM90140E-GE3 by:

Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2

Part Details for SUM90140E-GE3 by Vishay Intertechnologies

Overview of SUM90140E-GE3 by Vishay Intertechnologies

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Applications Education and Research Environmental Monitoring Industrial Automation Agriculture Technology Medical Imaging Electronic Manufacturing

Price & Stock for SUM90140E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 86Y1093
Newark Mosfet, N-Ch, 200V, 90A, 175Deg C, 375W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SUM90140E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 680
  • 1 $2.1000
  • 10 $1.9300
  • 25 $1.9300
  • 50 $1.7800
  • 100 $1.7800
  • 250 $1.7800
$1.7800 / $2.1000 Buy Now
DISTI # SUM90140E-GE3
Avnet Americas Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 800 $1.9949
$1.9949 Buy Now
DISTI # 86Y1093
Avnet Americas Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 86Y1093) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack 680 Partner Stock
  • 1 $3.0700
  • 10 $2.5800
  • 25 $2.4100
  • 50 $2.2500
  • 100 $2.0800
$2.0800 / $3.0700 Buy Now
DISTI # 78-SUM90140E-GE3
Mouser Electronics MOSFET 200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant 155
  • 1 $2.9900
  • 10 $2.5100
  • 25 $2.3100
  • 100 $2.0300
  • 250 $1.9200
  • 500 $1.7800
  • 800 $1.4300
  • 5,600 $1.3700
$1.3700 / $2.9900 Buy Now
Future Electronics N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $1.4400
  • 1,600 $1.4200
  • 2,400 $1.4000
  • 3,200 $1.3900
$1.3900 / $1.4400 Buy Now
Future Electronics N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks Container: Reel 0
Reel
  • 800 $1.4400
  • 1,600 $1.4200
  • 2,400 $1.4000
  • 3,200 $1.3900
$1.3900 / $1.4400 Buy Now
DISTI # SUM90140E-GE3
TTI MOSFET 200V Vds 20V Vgs D2PAK (TO-263) pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $1.4700
  • 1,600 $1.4400
  • 2,400 $1.4100
  • 5,600 $1.3800
$1.3800 / $1.4700 Buy Now
DISTI # SUM90140E-GE3
TME Transistor: N-MOSFET, unipolar, 200V, 75A, 125W, D2PAK,TO263 Min Qty: 1 0
  • 1 $3.2700
  • 5 $2.9500
  • 25 $2.6000
  • 100 $2.3400
$2.3400 / $3.2700 RFQ
DISTI # SUM90140E-GE3
Avnet Asia Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 77 Weeks, 0 Days 0
  • 800 $2.4200
  • 1,600 $2.3864
  • 2,400 $2.3537
  • 4,000 $2.3219
  • 8,000 $2.2608
  • 20,000 $2.2028
  • 40,000 $2.1477
$2.1477 / $2.4200 Buy Now
Chip1Cloud MOSFET N-CH 200V 90A D2PAK 3370
RFQ
DISTI # SUM90140E-GE3
EBV Elektronik Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 39 Weeks, 0 Days EBV - 0
Buy Now
Perfect Parts Corporation   896
RFQ

Part Details for SUM90140E-GE3

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SUM90140E-GE3 Part Data Attributes:

SUM90140E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUM90140E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks, 1 Day
Date Of Intro 2016-05-02
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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