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Transistors / Power Field-Effect Transistors / SUM90330E-GE3
Datasheets
SUM90330E-GE3 by:

POWER, FET,

Part Details for SUM90330E-GE3 by Vishay Intertechnologies

Overview of SUM90330E-GE3 by Vishay Intertechnologies

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Price & Stock for SUM90330E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 59AC7818
Newark N-Channel 200-V (D-S) 175C Mosfet Rohs Compliant: Yes |Vishay SUM90330E-GE3 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $0.8820
  • 1,000 $0.7590
  • 2,500 $0.6990
$0.6990 / $0.8820 Buy Now
DISTI # SUM90330E-GE3
Avnet Americas N-CHANNEL 200-V (D-S) 175C MOSFET - Tape and Reel (Alt: SUM90330E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 800 $0.8498
  • 1,600 $0.8225
  • 3,200 $0.7953
  • 4,800 $0.7631
  • 6,400 $0.7383
  • 8,000 $0.7036
  • 80,000 $0.6689
$0.6689 / $0.8498 Buy Now
DISTI # 78-SUM90330E-GE3
Mouser Electronics MOSFET 200V Vds 20V Vgs TO-263 RoHS: Compliant 3068
  • 1 $1.6500
  • 10 $1.3600
  • 100 $1.0600
  • 500 $0.7980
  • 800 $0.6700
  • 2,400 $0.6420
  • 4,800 $0.6400
  • 9,600 $0.6200
$0.6200 / $1.6500 Buy Now
Future Electronics 200Volt, 35.1Amp, 37.5 mOhm, N-Channel, D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $0.6800
  • 1,600 $0.6650
  • 2,400 $0.6550
  • 3,200 $0.6500
  • 4,000 $0.6300
$0.6300 / $0.6800 Buy Now
Future Electronics 200Volt, 35.1Amp, 37.5 mOhm, N-Channel, D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $0.6800
  • 1,600 $0.6650
  • 2,400 $0.6550
  • 3,200 $0.6500
  • 4,000 $0.6300
$0.6300 / $0.6800 Buy Now
DISTI # SUM90330E-GE3
TTI MOSFET 200V Vds 20V Vgs TO-263 RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $0.6700
  • 1,600 $0.6570
  • 2,400 $0.6440
  • 4,800 $0.6320
  • 6,400 $0.6190
$0.6190 / $0.6700 Buy Now
DISTI # SUM90330E-GE3
Avnet Americas N-CHANNEL 200-V (D-S) 175C MOSFET - Tape and Reel (Alt: SUM90330E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 800 $0.8498
  • 1,600 $0.8225
  • 3,200 $0.7953
  • 4,800 $0.7631
  • 6,400 $0.7383
  • 8,000 $0.7036
  • 80,000 $0.6689
$0.6689 / $0.8498 Buy Now
DISTI # SUM90330E-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 35.1A, Idm: 70A Min Qty: 800 0
  • 800 $0.9600
$0.9600 RFQ
DISTI # SUM90330E-GE3
Avnet Americas N-CHANNEL 200-V (D-S) 175C MOSFET - Tape and Reel (Alt: SUM90330E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 800 $0.8498
  • 1,600 $0.8225
  • 3,200 $0.7953
  • 4,800 $0.7631
  • 6,400 $0.7383
  • 8,000 $0.7036
  • 80,000 $0.6689
$0.6689 / $0.8498 Buy Now
DISTI # SUM90330E-GE3
Avnet Asia N-CHANNEL 200-V (D-S) 175C MOSFET (Alt: SUM90330E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 88 Weeks, 0 Days 0
RFQ
DISTI # SUM90330E-GE3
EBV Elektronik N-CHANNEL 200-V (D-S) 175C MOSFET (Alt: SUM90330E-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 4 Days EBV - 1600
Buy Now
DISTI # 2785450RL
Farnell MOSFET, N-CH, 200V, 35.1A, TO-263 RoHS: Compliant Min Qty: 100 Lead time: 41 Weeks, 1 Days Container: Reel 0
  • 100 $1.0590
  • 500 $0.8379
  • 1,000 $0.7730
  • 5,000 $0.7630
$0.7630 / $1.0590 Buy Now
DISTI # 2785450
Farnell MOSFET, N-CH, 200V, 35.1A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 41 Weeks, 1 Days Container: Cut Tape 0
  • 1 $1.8732
  • 10 $1.4111
  • 100 $1.0590
  • 500 $0.8379
  • 1,000 $0.7730
  • 5,000 $0.7630
$0.7630 / $1.8732 Buy Now

Part Details for SUM90330E-GE3

SUM90330E-GE3 CAD Models

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SUM90330E-GE3 Part Data Attributes

Parametric Data
SUM90330E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUM90330E-GE3 Vishay Intertechnologies POWER, FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 38 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 54.45 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35.1 A
Drain-source On Resistance-Max 0.0375 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 11 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 70 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 94 ns
Turn-on Time-Max (ton) 74 ns

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