-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
X34 PB-F SOT-23 TRANSISTOR FOR L
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
757-TBC847BLM
|
Mouser Electronics | Bipolar Transistors - BJT BJT NPN 0.15A 50V RoHS: Compliant | 61633 |
|
$0.0140 / $0.1600 | Buy Now |
DISTI #
V36:1790_16563613
|
Arrow Electronics | Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23 Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2340 | Americas - 3000 |
|
$0.0132 / $0.0235 | Buy Now |
DISTI #
71299438
|
Verical | Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23 Min Qty: 3000 Package Multiple: 3000 Date Code: 2340 | Americas - 3000 |
|
$0.0132 / $0.0235 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
TBC847B,LM
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TBC847B,LM
Toshiba America Electronic Components
X34 PB-F SOT-23 TRANSISTOR FOR L
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Collector Current-Max (IC) | 0.15 A | |
Collector-Base Capacitance-Max | 3.5 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.32 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
VCEsat-Max | 0.4 V |