Part Details for TJ200F04M3L,LQ(O by Toshiba America Electronic Components
Overview of TJ200F04M3L,LQ(O by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TJ200F04M3L,LQ(O
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
TJ200F04M3L,LQ(O
|
EBV Elektronik | Trans MOSFET P 40V 200A 3-Pin TO-220SM Bag (Alt: TJ200F04M3L,LQ(O) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 35 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for TJ200F04M3L,LQ(O
TJ200F04M3L,LQ(O CAD Models
TJ200F04M3L,LQ(O Part Data Attributes:
|
TJ200F04M3L,LQ(O
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TJ200F04M3L,LQ(O
Toshiba America Electronic Components
Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TO-220SM(W), 3/2 PIN | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 924 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1150 pF | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 600 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |