Part Details for TK750A60F,S4X(S by Toshiba America Electronic Components
Overview of TK750A60F,S4X(S by Toshiba America Electronic Components
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TK750A60F,S4X(S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72AK4580
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Newark | Mosfet, N-Ch, 600V, 10A, To-220Sis, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK750A60F, S4X(S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 36 |
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$0.7150 / $1.6200 | Buy Now |
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DISTI #
50950729
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Verical | Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | Americas - 22500 |
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$0.6535 / $0.7072 | Buy Now |
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DISTI #
66987642
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Verical | Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS RoHS: Compliant Min Qty: 33 Package Multiple: 1 | Americas - 119 |
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$0.7850 / $0.9588 | Buy Now |
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Ameya Holding Limited | 4999 |
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RFQ | ||
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DISTI #
TK750A60F,S4X(S
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Avnet Asia | Transistor MOSFET N-CH 600V 10A 3-Pin TO-220SIS Tube (Alt: TK750A60F,S4X(S) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
C1S751201221780
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Chip1Stop | MOSFET RoHS: Compliant Container: Bulk | 119 |
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$0.6280 / $1.0400 | Buy Now |
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DISTI #
TK750A60F,S4X(S
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EBV Elektronik | (Alt: TK750A60F,S4X(S) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for TK750A60F,S4X(S
TK750A60F,S4X(S CAD Models
TK750A60F,S4X(S Part Data Attributes
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TK750A60F,S4X(S
Toshiba America Electronic Components
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Datasheet
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TK750A60F,S4X(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SC-67, TO-220SIS, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 201 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8.5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |