Part Details for TN2524N8-G by Microchip Technology Inc
Overview of TN2524N8-G by Microchip Technology Inc
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TN2524N8-G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
44AC3358
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Newark | Mosfet, N-Ch, 0.36A, 240V, Sot-89-3, Transistor Polarity:N Channel, Continuous Drain Current Id:360Ma, Drain Source Voltage Vds:240V, On Resistance Rds(On):4Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Microchip TN2524N8-G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7970 |
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$1.2700 / $1.6000 | Buy Now |
DISTI #
83AK7202
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Newark | Mosfet, N-Ch, 240V, 0.36A, Sot-89 Rohs Compliant: Yes |Microchip TN2524N8-G Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 4000 |
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$1.2000 | Buy Now |
DISTI #
53Y4251
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Newark | Mosfet, N-Channel Enhancement-Mode, 240V, 6.0 Ohm 3 Sot-89 T/R Rohs Compliant: Yes |Microchip TN2524N8-G Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.1900 | Buy Now |
DISTI #
TN2524N8-GCT-ND
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DigiKey | MOSFET N-CH 240V 360MA TO243AA Min Qty: 1 Lead time: 4 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
2015 In Stock |
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$1.1500 / $1.5400 | Buy Now |
DISTI #
TN2524N8-G
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Avnet Americas | Trans MOSFET N-CH 240V 0.36A 4-Pin(3+Tab) SOT-89 - Tape and Reel (Alt: TN2524N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 0 Days Container: Reel | 10000 |
|
$1.1500 / $1.5400 | Buy Now |
DISTI #
689-TN2524N8-G
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Mouser Electronics | MOSFET 240V 6Ohm RoHS: Compliant | 5910 |
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$1.1500 / $1.5400 | Buy Now |
DISTI #
V72:2272_06515642
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Arrow Electronics | Trans MOSFET N-CH Si 240V 0.36A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks Date Code: 2326 Container: Cut Strips | Americas - 6785 |
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$1.1506 / $1.5165 | Buy Now |
DISTI #
V36:1790_06515642
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Arrow Electronics | Trans MOSFET N-CH Si 240V 0.36A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks Date Code: 2326 | Americas - 4000 |
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$1.1392 | Buy Now |
DISTI #
TN2524N8-G
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 6.0 Ohm, Projected EOL: 2034-02-24 RoHS: Compliant pbFree: Yes | 64898 |
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$0.8900 / $1.5400 | Buy Now |
DISTI #
70451985
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RS | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 6.0 Ohm3 SOT-89 T/R | Microchip Technology Inc. TN2524N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 45 Weeks, 0 Days Container: Bulk | 0 |
|
$1.3100 / $1.5400 | RFQ |
Part Details for TN2524N8-G
TN2524N8-G CAD Models
TN2524N8-G Part Data Attributes
|
TN2524N8-G
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
TN2524N8-G
Microchip Technology Inc
0.36A, 240V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | SOT-89, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 240 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 25 pF | |
JEDEC-95 Code | TO-243AA | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 2 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 40 ns | |
Turn-on Time-Max (ton) | 20 ns |
Alternate Parts for TN2524N8-G
This table gives cross-reference parts and alternative options found for TN2524N8-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN2524N8-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STD5NB20T4 | 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STMicroelectronics | TN2524N8-G vs STD5NB20T4 |
STD4NB25-1 | 4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | TN2524N8-G vs STD4NB25-1 |
IRF712 | Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | TN2524N8-G vs IRF712 |
IRF712-009 | Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | TN2524N8-G vs IRF712-009 |
ZVN4424GTC | Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Diodes Incorporated | TN2524N8-G vs ZVN4424GTC |
IRF713 | Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | TN2524N8-G vs IRF713 |
IRF710 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | TN2524N8-G vs IRF710 |
IRF712-010 | Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | TN2524N8-G vs IRF712-010 |
IRF712 | 1.7A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | TN2524N8-G vs IRF712 |
TN0624N5 | Power Field-Effect Transistor, 1.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Supertex Inc | TN2524N8-G vs TN0624N5 |