Datasheets
VQ1000J by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for VQ1000J by Vishay Siliconix

Overview of VQ1000J by Vishay Siliconix

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Part Details for VQ1000J

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VQ1000J Part Data Attributes

VQ1000J Vishay Siliconix
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VQ1000J Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SILICONIX INC
Part Package Code DIP
Package Description ,
Pin Count 14
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Drain Current-Max (ID) 0.225 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for VQ1000J

This table gives cross-reference parts and alternative options found for VQ1000J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1000J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1000P
VQ1000P Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1000P
Part Number Description Manufacturer Compare
RBVQ1000N7 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 Supertex Inc VQ1000J vs RBVQ1000N7
ZVN3306E 0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1000J vs ZVN3306E
VQ1000P Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1000P
ZVN4206E Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1000J vs ZVN4206E
VQ1004P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1004P
VN3205P-G Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001, GREEN, MS-001AA, 14 PIN Supertex Inc VQ1000J vs VN3205P-G
ZVN2106E 0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1000J vs ZVN2106E
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1000J vs VQ1004J
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1000P
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 Vishay Intertechnologies VQ1000J vs VQ1004P

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