Datasheets
VRF2933MP by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN

Part Details for VRF2933MP by Microsemi Corporation

Overview of VRF2933MP by Microsemi Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for VRF2933MP

Part # Distributor Description Stock Price Buy
DISTI # VRF2933MP
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 10 0
  • 10 $251.2800
  • 100 $244.7500
  • 500 $238.5600
$238.5600 / $251.2800 Buy Now

Part Details for VRF2933MP

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VRF2933MP Part Data Attributes

VRF2933MP Microsemi Corporation
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VRF2933MP Microsemi Corporation RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description 0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 170 V
Drain Current-Max (ID) 40 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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