Part Details for ZXMS6005DGQTA by Diodes Incorporated
Overview of ZXMS6005DGQTA by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Automotive
Price & Stock for ZXMS6005DGQTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-ZXMS6005DGQTACT-ND
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DigiKey | IC PWR DRIVER N-CHAN 1:1 SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1237 In Stock |
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$0.3750 / $0.9700 | Buy Now |
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DISTI #
ZXMS6005DGQTA
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Avnet Americas | DIIZXMS6005DGQTA - Tape and Reel (Alt: ZXMS6005DGQTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
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$0.3261 | Buy Now |
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DISTI #
621-ZXMS6005DGQTA
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Mouser Electronics | MOSFETs Low Side IntelliFET SOT223 T&R 1K RoHS: Compliant | 9683 |
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$0.3750 / $0.9700 | Buy Now |
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DISTI #
ZXMS6005DGQTA
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TME | IC: power switch, low-side, 2A, Ch: 1, N-Channel, SMD, SOT223, 0÷5.5V Min Qty: 1 | 0 |
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$0.4680 / $0.8580 | RFQ |
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DISTI #
ZXMS6005DGQTA
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Avnet Silica | DIIZXMS6005DGQTA (Alt: ZXMS6005DGQTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days | Silica - 1000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 1000 |
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$0.5885 | Buy Now |
Part Details for ZXMS6005DGQTA
ZXMS6005DGQTA CAD Models
ZXMS6005DGQTA Part Data Attributes
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ZXMS6005DGQTA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZXMS6005DGQTA
Diodes Incorporated
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 490 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |