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Part Details for ZXMS6005DGTA by Diodes Incorporated
Overview of ZXMS6005DGTA by Diodes Incorporated
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Automotive
Price & Stock for ZXMS6005DGTA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
ZXMS6005DGTADICT-ND
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DigiKey | IC PWR DRIVER N-CHAN 1:1 SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8509 In Stock |
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$0.3750 / $0.9700 | Buy Now |
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DISTI #
ZXMS6005DGTA
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Avnet Americas | Self Protected Low Side MOSFET 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMS6005DGTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3261 | Buy Now |
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DISTI #
522-ZXMS6005DGTA
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Mouser Electronics | MOSFETs 60V N-Ch Intellifet 200mohm 2A 490mJ RoHS: Compliant | 4621 |
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$0.3750 / $0.8800 | Buy Now |
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DISTI #
70438879
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RS | MOSFET IntelliFET N-ch 60V 2A SOT223 | Diodes Inc ZXMS6005DGTA RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.8600 / $1.0100 | RFQ |
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Future Electronics | ZXMS6005D 60 V 2 A N-Ch Self Protected Enhancement Mode INTELLIFET®Mosfet-SOT223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3700 / $0.4050 | Buy Now |
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Future Electronics | ZXMS6005D 60 V 2 A N-Ch Self Protected Enhancement Mode INTELLIFET®Mosfet-SOT223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3700 / $0.4050 | Buy Now |
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Bristol Electronics | 2000 |
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RFQ | ||
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DISTI #
ZXMS6005DGTA
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TME | Transistor: N-MOSFET, IntelliFET™, unipolar, 60V, 2A, 1.3W, SOT223 Min Qty: 1 | 490 |
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$0.5350 / $0.7800 | Buy Now |
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ComSIT USA | 60 VOLT CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Power Field-Effect Transistor, 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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DISTI #
ZXMS6005DGTA
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Avnet Silica | Self Protected Low Side MOSFET 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMS6005DGTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days | Silica - 2000 |
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Buy Now |
Part Details for ZXMS6005DGTA
ZXMS6005DGTA CAD Models
ZXMS6005DGTA Part Data Attributes
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ZXMS6005DGTA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZXMS6005DGTA
Diodes Incorporated
Power Field-Effect Transistor, 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOT-223, 4 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT-223 | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 490 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |