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1 - 10 of 58 results
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DMPH6050SK3-13
Diodes Incorporated
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$0.4349 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 7.2 A | 70 mΩ | 31 mJ | 68 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 40 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | 175 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | DIODES INC | DPAK-3/2 | not_compliant | EAR99 | ||||||||||
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PH6030L,115
NXP Semiconductors
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 76.7 A | 9.7 mΩ | 95 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 62.5 W | 300 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | NXP SEMICONDUCTORS | LEAD FREE, PLASTIC, LFPAK-5 | not_compliant | EAR99 | 235 | |||||||||||
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DMPH6050SFGQ-7
Diodes Incorporated
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$0.6660 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 60 V | 1 | 18 A | 70 mΩ | HIGH RELIABILITY | 30.8 mJ | 64.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.8 W | 2.8 W | 32 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | AEC-Q101; MIL-STD-202 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | MATTE TIN | NO LEAD | DUAL | DIODES INC | not_compliant | EAR99 | 8541.29.00.95 | |||||||
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PH6030L
NXP Semiconductors
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 76.7 A | 9.7 mΩ | 95 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 62.5 W | 300 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | LEAD FREE, PLASTIC, LFPAK-5 | not_compliant | EAR99 | 235 | ||||||||||||
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DMPH6050SK3Q-13
Diodes Incorporated
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$0.5630 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 7.2 A | 70 mΩ | HIGH RELIABILITY | 31 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | DIODES INC | DPAK-3/2 | not_compliant | EAR99 | ||||||||||||
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DMPH6050SFGQ-13
Diodes Incorporated
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Check for Price | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 60 V | 1 | 18 A | 70 mΩ | HIGH RELIABILITY | 30.8 mJ | 64.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.8 W | 2.8 W | 32 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | AEC-Q101; MIL-STD-202 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | MATTE TIN | NO LEAD | DUAL | DIODES INC | not_compliant | EAR99 | 8541.29.00.95 | |||||||
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DMPH6023SK3Q-13
Diodes Incorporated
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Check for Price | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 7.3 A | 33 mΩ | HIGH RELIABILITY | 60 mJ | 143 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 W | 60 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | DIODES INC | not_compliant | EAR99 | |||||||||
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DMPH6023SK3-13
Diodes Incorporated
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$0.6560 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 7.3 A | 33 mΩ | 60 mJ | 143 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 W | 60 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | DIODES INC | compliant | EAR99 | ||||||||||||||
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PH6030LT/R
NXP Semiconductors
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 1 | 76.7 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 62.5 W | 150 °C | NXP SEMICONDUCTORS | , | unknown | EAR99 | |||||||||||||||||||||||||||||||
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DMPH6050SPDQ-13
Diodes Incorporated
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Check for Price | Yes | Active | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 60 V | 2 | 6.3 A | 48 mΩ | 30 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.8 W | 40 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | AEC-Q101; IATF 16949; MIL-STD-202 | 1 | 175 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | DIODES INC | compliant | EAR99 |