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MT29F32G08AFABAH1-IT:B
Micron Technology Inc
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Check for Price | Yes | Active | 34.3597 Gbit | 8 | 4GX8 | 3.3 V | FLASH | 1 | 4000000000 | 4.295 G | ASYNCHRONOUS | PARALLEL | 2.7 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PBGA-B100 | e1 | 85 °C | -40 °C | 100 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1 mm | 18 mm | 12 mm | MICRON TECHNOLOGY INC | VBGA, | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||||||||||||||||
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K9F4G08U0A-IIB00
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 4.295 Gbit | 8 | 128K | 512MX8 | 3.3 V | 20 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | 2.7 V | YES | 50 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | R-PBGA-B52 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 52 | PLASTIC/EPOXY | VBGA | LGA52(UNSPEC) | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 2 mm | BOTTOM | 650 µm | 17 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | VBGA, LGA52(UNSPEC) | unknown | EAR99 | 8542.32.00.51 | LGA | 52 | ||||||||||||||||
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S26HS512TGABHI010
Cypress Semiconductor
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$12.7610 | Yes | Transferred | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 200 MHz | FLASH | 25 | 1280000 Write/Erase Cycles | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 1.8 V | SPI | 2 V | 1.7 V | CMOS | NOR TYPE | HARDWARE | R-PBGA-B24 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | BGA-24 | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||||||||||||||||
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S28HL512TFPBHV013
Cypress Semiconductor
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Check for Price | Yes | Transferred | 536.8709 Mbit | 8 | 64MX8 | 3 V | 166 MHz | FLASH | 1 | 25 | 1280000 Write/Erase Cycles | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 3.6 V | 2.7 V | CMOS | NOR TYPE | HARDWARE | R-PBGA-B24 | 105 °C | -40 °C | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | BGA-24 | compliant | ||||||||||||||||||||||||||
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S26KS128SDABHI030
Cypress Semiconductor
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$7.5100 | Yes | Transferred | 134.2177 Mbit | 8 | 16MX8 | 1.8 V | 96 ns | FLASH | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | PARALLEL | 1.8 V | 2 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | compliant | 3A991.B.1.A | 8542.32.00.51 | 2016-10-25 | |||||||||||||||||||||||||||||
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S26KL512SDABHA030
Cypress Semiconductor
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$11.4500 | Yes | Yes | Transferred | 536.8709 Mbit | 8 | 64MX8 | 3 V | 96 ns | FLASH | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | 85 °C | -40 °C | NOT SPECIFIED | AEC-Q100; TS 16949 | NOT SPECIFIED | 24 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | compliant | 3A991.B.1.A | 8542.32.00.51 | ||||||||||||||||||||||||||||
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S26HS01GTGABHV030
Cypress Semiconductor
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Check for Price | Yes | Transferred | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 200 MHz | FLASH | 25 | 2560000 Write/Erase Cycles | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 1.8 V | HYPERBUS | 2 V | 1.7 V | CMOS | NOR TYPE | HARDWARE | S-PBGA-B24 | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | SQUARE | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 8 mm | CYPRESS SEMICONDUCTOR CORP | BGA-24 | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||||||||||||||||
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IS26KL512S-DABLA103
Integrated Silicon Solution Inc
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Check for Price | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 3 V | FLASH | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | 85 °C | -40 °C | AEC-Q100; TS 16949 | 24 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||||||||||||||||||
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K9KAG08U1M-IIB00
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 17.1799 Gbit | 8 | 256K | 2GX8 | 3.3 V | 20 ns | FLASH | YES | 1 | 4K | 2000000000 | 2.1475 G | ASYNCHRONOUS | 4K words | PARALLEL | 2.7 V | YES | 1 mA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B52 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 52 | PLASTIC/EPOXY | VBGA | LGA52(UNSPEC) | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 650 µm | 17 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | VBGA, LGA52(UNSPEC) | compliant | EAR99 | 8542.32.00.51 | LGA | 52 | |||||||||||||||||||
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S26KS256SDABHB033
Cypress Semiconductor
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Check for Price | Transferred | 268.4355 Mbit | 8 | 32MX8 | 1.8 V | 96 ns | FLASH | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | 105 °C | -40 °C | AEC-Q100; TS 16949 | 24 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | VBGA, | compliant | EAR99 | 8542.32.00.51 |