1.5SMC8.2A-E3/57T
vs
1N5610
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
Reach Compliance Code |
not_compliant
|
compliant
|
Factory Lead Time |
8 Weeks
|
21 Weeks
|
Samacsys Manufacturer |
Vishay
|
|
Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
Breakdown Voltage-Max |
8.61 V
|
|
Breakdown Voltage-Min |
7.79 V
|
33 V
|
Breakdown Voltage-Nom |
8.2 V
|
|
Clamping Voltage-Max |
12.1 V
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AB
|
|
JESD-30 Code |
R-PDSO-C2
|
O-LALF-W2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
6.5 W
|
3 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
7.02 V
|
30.5 V
|
Surface Mount |
YES
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD OVER NICKEL
|
Terminal Form |
C BEND
|
WIRE
|
Terminal Position |
DUAL
|
AXIAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Base Number Matches |
2
|
6
|
Package Description |
|
HERMETICALLY SEALED, GLASS PACKAGE-2
|
Case Connection |
|
ISOLATED
|
|
|
|
Compare 1.5SMC8.2A-E3/57T with alternatives
Compare 1N5610 with alternatives