1DI200A-140
vs
1DI200Z-120
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
FUJI ELECTRIC CO LTD
|
Package Description |
FLANGE MOUNT, R-PUFM-X6
|
FLANGE MOUNT, R-XUFM-X4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Collector Current-Max (IC) |
200 A
|
200 A
|
Collector-Emitter Voltage-Max |
1400 V
|
1200 V
|
Configuration |
DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
|
DC Current Gain-Min (hFE) |
70
|
100
|
Fall Time-Max (tf) |
3000 ns
|
2000 ns
|
JESD-30 Code |
R-PUFM-X6
|
R-XUFM-X4
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
4
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
1400 W
|
1400 W
|
Power Dissipation-Max (Abs) |
1400 W
|
1400 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rise Time-Max (tr) |
3000 ns
|
3000 ns
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
18000 ns
|
17000 ns
|
Turn-on Time-Max (ton) |
3000 ns
|
3000 ns
|
Base Number Matches |
1
|
1
|
Pin Count |
|
4
|
Case Connection |
|
ISOLATED
|
Operating Temperature-Max |
|
150 °C
|
Transistor Application |
|
SWITCHING
|
VCEsat-Max |
|
2.8 V
|
|
|
|
Compare 1DI200A-140 with alternatives
Compare 1DI200Z-120 with alternatives