1N5361B vs MV1N5361BE3TR feature comparison

1N5361B Galaxy Microelectronics

Buy Now Datasheet

MV1N5361BE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICROSEMI CORP
Part Package Code DO-27S
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 5 Ω
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W 5 W
Reference Voltage-Nom 27 V 27 V
Surface Mount NO NO
Technology ZENER ZENER
Voltage Tol-Max 10% 5%
Working Test Current 50 mA 50 mA
Base Number Matches 1 2
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard MIL-19500
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

Compare 1N5361B with alternatives

Compare MV1N5361BE3TR with alternatives