1N5401
vs
1N5401/G
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
RFE INTERNATIONAL INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
200 A
|
200 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
2
|
2
|
| Case Connection |
|
ISOLATED
|
|
|
|
Compare 1N5401 with alternatives
Compare 1N5401/G with alternatives