1N5617
vs
JAN1N5617
feature comparison
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
GENERAL PURPOSE
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JESD-30 Code |
E-PALF-W2
|
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
50 A
|
|
| Number of Elements |
1
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ELLIPTICAL
|
|
| Package Style |
LONG FORM
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
400 V
|
|
| Reverse Recovery Time-Max |
0.15 µs
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
10
|
|
|
|
|
Compare 1N5617 with alternatives