1N5617
vs
F1T4P0G
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
GULF SEMICONDUCTOR LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
HERMETICALLY SEALED, GLASS PACKAGE-2
|
O-PALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
E-LALF-W2
|
O-PALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Recovery Time-Max |
0.15 µs
|
0.15 µs
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Application |
|
GENERAL PURPOSE
|
| Terminal Finish |
|
PURE TIN
|
|
|
|
Compare 1N5617 with alternatives
Compare F1T4P0G with alternatives