1N5818 vs 1N5818 feature comparison

1N5818 Sangdest Microelectronics (Nanjing) Co Ltd

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1N5818 Gulfsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD GULF SEMICONDUCTOR LTD
Reach Compliance Code compliant unknown
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY
Breakdown Voltage-Min 30 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V 0.55 V
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 100 µA
Reverse Test Voltage 30 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 5 1
Package Description PLASTIC, DO-41, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.80
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare 1N5818 with alternatives

Compare 1N5818 with alternatives