1N5820G vs 1N5820 feature comparison

1N5820G Taiwan Semiconductor

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1N5820 Changzhou Starsea Electronics Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU STARSEA ELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V 0.475 V
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 70 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 20 V 20 V
Reverse Current-Max 500 µA 2000 µA
Reverse Test Voltage 20 V 20 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 3 81
Breakdown Voltage-Min 20 V

Compare 1N5820G with alternatives

Compare 1N5820 with alternatives