1N914BWSR9G
vs
1N4148GW6_S1_00001
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Additional Feature
LOW POWER LOSS
Application
EFFICIENCY
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
JESD-30 Code
R-PDSO-F2
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
6
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
0.15 A
0.15 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.2 W
0.41 W
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Compare 1N914BWSR9G with alternatives
Compare 1N4148GW6_S1_00001 with alternatives