1N914BWSRRG
vs
MMBD4448W-H
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
FORMOSA MICROSEMI CO LTD
Package Description
GREEN, PLASTIC PACKAGE-2
HALOGEN FREE, PLASTIC PACKAGE-3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Additional Feature
LOW POWER LOSS
Application
EFFICIENCY
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
JESD-30 Code
R-PDSO-F2
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
0.15 A
0.15 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.2 W
0.2 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare 1N914BWSRRG with alternatives
Compare MMBD4448W-H with alternatives