1N914BWSRRG vs MMBD4448W-H feature comparison

1N914BWSRRG Taiwan Semiconductor

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MMBD4448W-H Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Package Description GREEN, PLASTIC PACKAGE-2 HALOGEN FREE, PLASTIC PACKAGE-3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PDSO-F2 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.2 W 0.2 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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