1SS307TE85L2 vs BAS21-G feature comparison

1SS307TE85L2 Toshiba America Electronic Components

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BAS21-G Sensitron Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer TOSHIBA CORP SENSITRON SEMICONDUCTOR
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 0.1 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.15 W 0.35 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Package Description R-PDSO-G3
Pin Count 3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 200 V
Reverse Recovery Time-Max 0.05 µs

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