24N50L-T3P-T
vs
SFF24N50B
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
SOLID STATE DEVICES INC
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
CHIP CARRIER, R-CBCC-N3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
1100 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
24 A
|
24 A
|
| Drain-source On Resistance-Max |
0.24 Ω
|
0.25 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
R-CBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
96 A
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 24N50L-T3P-T with alternatives
Compare SFF24N50B with alternatives