2N2219
vs
JAN2N2219A
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VPT COMPONENTS
|
RAYTHEON SEMICONDUCTOR
|
| Package Description |
TO-5, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.8 A
|
|
| Collector-Base Capacitance-Max |
8 pF
|
|
| Collector-Emitter Voltage-Max |
30 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
|
| JEDEC-95 Code |
TO-205AD
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.8 W
|
|
| Power Dissipation-Max (Abs) |
3 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
250 ns
|
|
| Turn-on Time-Max (ton) |
40 ns
|
|
| VCEsat-Max |
1.6 V
|
|
| Base Number Matches |
56
|
18
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
|
|
|
Compare 2N2219 with alternatives
Compare JAN2N2219A with alternatives