2N2222AUA
vs
2N2222AUAE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VPT COMPONENTS
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.8 A
|
0.8 A
|
| Collector-Base Capacitance-Max |
8 pF
|
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PDSO-N4
|
R-CDSO-N4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
1.5 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
300 ns
|
300 ns
|
| Turn-on Time-Max (ton) |
35 ns
|
35 ns
|
| VCEsat-Max |
1 V
|
|
| Base Number Matches |
12
|
1
|
| Package Description |
|
SMALL OUTLINE, R-CDSO-N4
|
|
|
|
Compare 2N2222AUAE3 with alternatives