2N2369 vs 2N5581E3 feature comparison

2N2369 STMicroelectronics

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2N5581E3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 0.5 A 0.8 A
Collector-Emitter Voltage-Max 15 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JEDEC-95 Code TO-18 TO-46
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 500 MHz 250 MHz
Base Number Matches 3 1

Compare 2N2369 with alternatives

Compare 2N5581E3 with alternatives